发明授权
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
-
申请号: US14643762申请日: 2015-03-10
-
公开(公告)号: US09577625B2公开(公告)日: 2017-02-21
- 发明人: Yong-Hoon Kim , Hyun-Woo Lee
- 申请人: SK hynix Inc.
- 申请人地址: KR Gyeonggi-do
- 专利权人: SK Hynix Inc.
- 当前专利权人: SK Hynix Inc.
- 当前专利权人地址: KR Gyeonggi-do
- 代理机构: IP & T Group LLP
- 优先权: KR10-2010-0008721 20100129
- 主分类号: H03H11/26
- IPC分类号: H03H11/26 ; H03K5/159 ; H03K5/15
摘要:
A semiconductor device including a common delay circuit configured to delay an input signal in response to a delay control code to output a first delayed input signal and a second delayed input signal; a first delay circuit configured to delay the first delayed input signal in response to the delay control code and to output a first output signal; and a second delay circuit configured to delay the second delayed input signal in response to the delay control code and to output a second output signal.
公开/授权文献
- US20150188529A1 SEMICONDUCTOR DEVICE 公开/授权日:2015-07-02
信息查询