Invention Grant
US09580332B2 Nanostructured titania semiconductor material and its production process
有权
纳米结构二氧化钛半导体材料及其生产工艺
- Patent Title: Nanostructured titania semiconductor material and its production process
- Patent Title (中): 纳米结构二氧化钛半导体材料及其生产工艺
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Application No.: US13922952Application Date: 2013-06-20
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Publication No.: US09580332B2Publication Date: 2017-02-28
- Inventor: Salvador Castillo Cervantes , Isidro Mejia Centeno , Roberto Camposeco Solis , Florencia Marina Moran Pineda , Juan Navarrete Bolanos , J. Ascension Montoya De La Fuente , Alfredo Vargas Escudero
- Applicant: INSTITUTO MEXICANO DEL PETROLEO
- Applicant Address: MX Mexico City
- Assignee: INSTITUTO MEXICANO DEL PETROLEO
- Current Assignee: INSTITUTO MEXICANO DEL PETROLEO
- Current Assignee Address: MX Mexico City
- Agency: Dickinson Wright PLLC
- Priority: MXMX/A/2012/007270 20120621
- Main IPC: C01G23/053
- IPC: C01G23/053 ; B01J21/06
Abstract:
A nanostructured titania semiconductor material termed TSG-IMP having a predetermined crystal size is produced by a sol-gel method by adding a titanium alkoxide to an alcoholic solution, adding an acid to the alcoholic solution, subjecting the acidic solution to agitation under reflux conditions; stabilizing the medium and adding bidistilled water under reflux until gelation; subjecting the gel to aging until complete formation of the titania which is dried and calcined.
Public/Granted literature
- US20140037929A1 Nanostructured titania semiconductor material and its production process Public/Granted day:2014-02-06
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