Invention Grant
US09581620B2 Integrated semiconductor device comprising a hall effect current sensor
有权
集成半导体器件,包括霍尔效应电流传感器
- Patent Title: Integrated semiconductor device comprising a hall effect current sensor
- Patent Title (中): 集成半导体器件,包括霍尔效应电流传感器
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Application No.: US14615196Application Date: 2015-02-05
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Publication No.: US09581620B2Publication Date: 2017-02-28
- Inventor: Dario Sutera , Davide Giuseppe Patti , Valeria Cinnera Martino
- Applicant: STMicroelectronics S.r.l.
- Applicant Address: IT Agrate Brianza
- Assignee: STMicroelectronics S.r.l.
- Current Assignee: STMicroelectronics S.r.l.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: ITTO2014A0098 20140206
- Main IPC: G01R15/20
- IPC: G01R15/20 ; G01R15/18 ; G01R19/00 ; G01R33/07

Abstract:
The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.
Public/Granted literature
- US20150219693A1 INTEGRATED SEMICONDUCTOR DEVICE COMPRISING A HALL EFFECT CURRENT SENSOR Public/Granted day:2015-08-06
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