Invention Grant
US09583179B2 Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICs), 3DIC processor cores, and methods
有权
3D集成电路(IC)层和相关3D集成电路(3DIC),3DIC处理器核心和方法之间的三维(3D)存储器单元分离
- Patent Title: Three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) tiers, and related 3D integrated circuits (3DICs), 3DIC processor cores, and methods
- Patent Title (中): 3D集成电路(IC)层和相关3D集成电路(3DIC),3DIC处理器核心和方法之间的三维(3D)存储器单元分离
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Application No.: US14790510Application Date: 2015-07-02
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Publication No.: US09583179B2Publication Date: 2017-02-28
- Inventor: Jing Xie , Yang Du
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C11/412 ; G11C5/02 ; H01L27/06 ; H01L27/11 ; G11C11/419 ; H01L21/768 ; H01L23/48 ; H01L23/522

Abstract:
A three-dimensional (3D) memory cell separation among 3D integrated circuit (IC) (3DIC) tiers is disclosed. Related 3DICs, 3DIC processor cores, and methods are also disclosed. In embodiments disclosed herein, memory read access ports of a memory block are separated from a memory cell in different tiers of a 3DIC. 3DICs achieve higher device packing density, lower interconnect delays, and lower costs. In this manner, different supply voltages can be provided for the read access ports and the memory cell to be able to lower supply voltage for the read access ports. Static noise margins and read/write noise margins in the memory cell may be provided as a result. Providing multiple power supply rails inside a non-separated memory block that increases area can also be avoided.
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