Invention Grant
- Patent Title: MEMS swtich with internal conductive path
- Patent Title (中): 具有内部导电通路的MEMS开关
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Application No.: US14278362Application Date: 2014-05-15
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Publication No.: US09583294B2Publication Date: 2017-02-28
- Inventor: Check F. Lee , Raymond C. Goggin , Padraig L. Fitzgerald , Bernard P. Stenson , Mark Schirmer , Jo-ey Wong
- Applicant: Analog Devices Global
- Applicant Address: BM Hamilton
- Assignee: Analog Devices Global
- Current Assignee: Analog Devices Global
- Current Assignee Address: BM Hamilton
- Agency: Sunstein Kann Murphy & Timbers LLP
- Main IPC: H01H57/00
- IPC: H01H57/00 ; H01H59/00 ; B81B7/00 ; B81C1/00 ; H01H1/00

Abstract:
A MEMS switch has a base formed from a substrate with a top surface and an insulator layer formed on at least a portion of the top surface. Bonding material secures a cap to the base to form an interior chamber. The cap effectively forms an exterior region of the base that is exterior to the interior chamber. The MEMS switch also has a movable member (in the interior chamber) having a member contact portion, an internal contact (also in the interior chamber), and an exterior contact at the exterior region of the base. The contact portion of the movable member is configured to alternatively contact the interior contact. A conductor at least partially within the insulator layer electrically connects the interior contact and the exterior contact. The conductor is spaced from and electrically isolated from the bonding material securing the cap to the base.
Public/Granted literature
- US20150311021A1 MEMS Swtich with Internal Conductive Path Public/Granted day:2015-10-29
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