Invention Grant
- Patent Title: Light bath for particle suppression
- Patent Title (中): 光浴抑制粒子
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Application No.: US14837610Application Date: 2015-08-27
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Publication No.: US09583308B1Publication Date: 2017-02-28
- Inventor: William Davis Lee
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee: Varian Semiconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01J37/317
- IPC: H01J37/317 ; H01J37/08 ; H01J37/147

Abstract:
An apparatus, referred to as a light bath, is disposed in a beamline ion implantation system and is used to photoionize particles in the ion beam into positively charged particles. Once positively charged, these particles can be manipulated by the various components in the beamline ion implantation system. In certain embodiments, a positively biased electrode is disposed downstream from the light bath to repel the formerly non-positively charged particles away from the workpiece. In certain embodiments, the light bath is disposed within an existing component in the beamline ion implantation system, such as a deceleration stage or a Vertical Electrostatic Energy Filter. The light source emits light at a wavelength sufficiently short so as to ionize the non-positively charged particles. In certain embodiments, the wavelength is less than 250 nm.
Public/Granted literature
- US20170062173A1 LIGHT BATH FOR PARTICLE SUPPRESSION Public/Granted day:2017-03-02
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