发明授权
US09583389B2 Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
有权
通过原子层沉积（ALD）和化学气相沉积（CVD）选择性地沉积金属膜
- 专利标题： Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD)
- 专利标题（中）： 通过原子层沉积（ALD）和化学气相沉积（CVD）选择性地沉积金属膜
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申请号： US14960104申请日： 2015-12-04
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公开(公告)号： US09583389B2公开(公告)日： 2017-02-28
- 发明人: Patricio E. Romero , Scott B. Clendenning , Jeanette M. Roberts , Florian Gstrein
- 申请人： Patricio E. Romero , Scott B. Clendenning , Jeanette M. Roberts , Florian Gstrein
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Blakely, Sokoloff, Taylor & Zafman LLP
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L21/285 ; C23C16/04 ; C23C16/18 ; C23C16/455
摘要：
Selective area deposition of metal films by atomic layer deposition (ALD) and chemical vapor deposition (CVD) is described. In an example, a method of fabricating a metallization structure for an integrated circuit involves forming an exposed surface above a substrate, the exposed surface including regions of exposed dielectric material and regions of exposed metal. The method also involves forming, using a selective metal deposition process, a metal layer on the regions of exposed metal without forming the metal layer on the regions of exposed dielectric material.