Invention Grant
- Patent Title: Volumetric integrated circuit and volumetric integrated circuit manufacturing method
- Patent Title (中): 体积集成电路和体积集成电路制造方法
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Application No.: US14221477Application Date: 2014-03-21
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Publication No.: US09583410B2Publication Date: 2017-02-28
- Inventor: Daniel C. Edelstein , Michael A. Gaynes , Thomas M. Shaw , Bucknell C. Webb , Roy R. Yu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Cantor Colburn LLP
- Agent Louis Percello
- Main IPC: H01L23/29
- IPC: H01L23/29 ; H01L23/31
Abstract:
A volumetric integrated circuit manufacturing method is provided. The method includes assembling a slab element of elongate chips, exposing a wiring layer between adjacent elongate chips of the slab element, metallizing a surface of the slab element at and around the exposed wiring layer to form a metallized surface electrically coupled to the wiring layer and passivating the metallized surface to hermetically seal the metallized surface.
Public/Granted literature
- US20150270246A1 VOLUMETRIC INTEGRATED CIRCUIT AND VOLUMETRIC INTEGRATED CIRCUIT MANUFACTURING METHOD Public/Granted day:2015-09-24
Information query
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