Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US14809070Application Date: 2015-07-24
-
Publication No.: US09583441B2Publication Date: 2017-02-28
- Inventor: Takashi Ogura , Tatsuya Usami , Satoshi Kodama , Shuuichirou Ueno , Satoshi Itou , Takamasa Itou
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-161040 20140807
- Main IPC: H01L29/00
- IPC: H01L29/00 ; H01L23/532 ; H01L27/108 ; H01L21/768
Abstract:
A conductor provided in an interconnection layer is allowed to have a low resistance. An insulator film is provided over a substrate, and is comprised of SiO(1-x)Nx (where x>0.5 in an XRD analysis result). An interconnection is provided over the insulator film, and includes a first layer and a second layer. The first layer includes at least one of TiN, TaN, WN, and RuN. The second layer is provided over the first layer, and is formed of a material having a resistance lower than the first layer, for example, W.
Public/Granted literature
- US20160043036A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-02-11
Information query
IPC分类:
