Invention Grant
US09583442B2 Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer
有权
互连结构包括中间线（MOL）金属层局部互连在蚀刻停止层上
- Patent Title: Interconnect structure including middle of line (MOL) metal layer local interconnect on etch stop layer
- Patent Title (中): 互连结构包括中间线（MOL）金属层局部互连在蚀刻停止层上
-
Application No.: US14753407Application Date: 2015-06-29
-
Publication No.: US09583442B2Publication Date: 2017-02-28
- Inventor: Su Chen Fan , Sukwon Hong , William J. Taylor, Jr.
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/4763
- IPC: H01L21/4763 ; H01L23/535 ; H01L21/768 ; H01L23/532
Abstract:
An interconnect structure includes an insulator stack on an upper surface of a semiconductor substrate. The insulator stack includes a first insulator layer having at least one semiconductor device embedded therein and an etch stop layer interposed between the first insulator layer and a second insulator layer. At least one electrically conductive local contact extends through each of the second insulator layer, etch stop layer and, first insulator layer to contact the at least one semiconductor device. The interconnect structure further includes at least one first layer contact element disposed on the etch stop layer and against the at least one conductive local contact.
Public/Granted literature
- US20160379932A1 INTERCONNECT STRUCTURE INCLUDING MIDDLE OF LINE (MOL) METAL LAYER LOCAL INTERCONNECT ON ETCH STOP LAYER Public/Granted day:2016-12-29
Information query
IPC分类:
