Invention Grant
- Patent Title: Integrated circuit and semiconductor device
- Patent Title (中): 集成电路和半导体器件
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Application No.: US15093504Application Date: 2016-04-07
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Publication No.: US09583493B2Publication Date: 2017-02-28
- Inventor: Ha-young Kim , Sung-we Cho , Tae-joong Song , Sang-hoon Baek
- Applicant: Ha-young Kim , Sung-we Cho , Tae-joong Song , Sang-hoon Baek
- Applicant Address: KR
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2015-0049953 20150408; KR10-2015-0128566 20150910
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/092 ; H01L23/528 ; H01L23/522 ; H01L27/02

Abstract:
An embodiment includes an integrated circuit comprising a standard cell, the standard cell comprising: first and second active regions having different conductivity types and extending in a first direction; first, second, and third conductive lines extending over the first and second active regions in a second direction substantially perpendicular to the first direction, and disposed parallel to each other; and a cutting layer extending in the first direction between the first and second active regions and separating the first conductive line into a first upper conductive line and a first lower conductive line, the second conductive line into a second upper conductive line and a second lower conductive line, and the third conductive line into a third upper conductive line and a third lower conductive line; wherein: the first upper conductive line and the third lower conductive line are electrically connected together; and the second upper conductive line and the second lower conductive line are electrically connected together.
Public/Granted literature
- US20160300839A1 INTEGRATED CIRCUIT AND SEMICONDUCTOR DEVICE Public/Granted day:2016-10-13
Information query
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