Invention Grant
- Patent Title: Method of fabricating semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US14829649Application Date: 2015-08-19
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Publication No.: US09583594B2Publication Date: 2017-02-28
- Inventor: Duan Quan Liao , Yikun Chen , Ching Hwa Tey
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510432534 20150722
- Main IPC: H01L23/535
- IPC: H01L23/535 ; H01L29/66 ; H01L21/768 ; H01L29/06

Abstract:
A semiconductor device and a method of fabricating the same, the semiconductor device includes a hard mask layer and a plurality of spacers. The hard mask layer is disposed on a target layer and has a first material and a second material. The spacers are disposed on the hard mask layer, wherein a first portion of the spacers is disposed on the first material, and a second portion of the spacers is disposed on the second material.
Public/Granted literature
- US20170025519A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE Public/Granted day:2017-01-26
Information query
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