Invention Grant
US09583594B2 Method of fabricating semiconductor device 有权
制造半导体器件的方法

Method of fabricating semiconductor device
Abstract:
A semiconductor device and a method of fabricating the same, the semiconductor device includes a hard mask layer and a plurality of spacers. The hard mask layer is disposed on a target layer and has a first material and a second material. The spacers are disposed on the hard mask layer, wherein a first portion of the spacers is disposed on the first material, and a second portion of the spacers is disposed on the second material.
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