Invention Grant
- Patent Title: Organic thin film transistor and preparation method thereof, array substrate and preparation method thereof, and display device
- Patent Title (中): 有机薄膜晶体管及其制备方法,阵列基片及其制备方法以及显示装置
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Application No.: US14764453Application Date: 2014-12-04
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Publication No.: US09583722B2Publication Date: 2017-02-28
- Inventor: Honhang Fong , Yingtao Xie , Shihong Ouyang , Shucheng Cai , Qiang Shi , Ze Liu
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Applicant Address: CN Beijing
- Assignee: BOE Technology Group Co., Ltd.
- Current Assignee: BOE Technology Group Co., Ltd.
- Current Assignee Address: CN Beijing
- Agency: Collard & Roe, P.C.
- Priority: CN201410319179 20140704
- International Application: PCT/CN2014/093052 WO 20141204
- International Announcement: WO2016/000399 WO 20160107
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L51/05 ; H01L27/28 ; H01L51/00 ; H01L51/10

Abstract:
An organic thin film transistor and a preparation method thereof, an array substrate and a preparation method thereof, and a display device; and the preparation method of the organic thin film transistor comprises: forming a source-drain metal layer including a source electrode (12a) and a drain electrode (12b), and forming an organic semiconductor active layer (13) in contact with the source electrode (12a) and the drain electrode (12b); and forming an organic insulating thin film (140) on a substrate (10) where the source-drain metal layer and the organic semiconductor active layer (13) have been formed, thinning the organic insulating thin film (140) and curing the thinned organic insulating thin film (140), or curing the organic insulating thin film (140) and thinning the cured organic insulating thin film (140), to form an organic insulating layer (14). The method can be used to form a thin and uniform organic insulating layer, so a technical difficulty in forming a via hole is reduced.
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