Invention Grant
- Patent Title: Focus metrology method and photolithography method and system
- Patent Title (中): 聚焦测量方法和光刻方法及系统
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Application No.: US14332116Application Date: 2014-07-15
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Publication No.: US09587929B2Publication Date: 2017-03-07
- Inventor: Hung-Ming Kuo , Jui-Chun Peng , Heng-Hsin Liu , Yung-Yao Lee
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03B27/68 ; G01B11/06 ; G03F7/20 ; G03F9/00
Abstract:
The present disclosure provides a focus metrology method and photolithography method and system. The focus metrology method includes recognizing at least one relevant region and at least one irrelevant region on a workpiece surface, measuring a height of the relevant region and determining a focal length for an exposure process based on the measured height of the relevant region.
Public/Granted literature
- US20160018743A1 FOCUS METROLOGY METHOD AND PHOTOLITHOGRAPHY METHOD AND SYSTEM Public/Granted day:2016-01-21
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