A semiconductor memory device includes a first page buffer block and a second page buffer block corresponding to a first memory bank and a second memory bank, respectively, an input/output control circuit suitable for transferring input data to data lines, a first column decoder and a second column decoder suitable for latching the input data transferred through the data lines to the first page buffer block and the second page buffer block, respectively, based on a column address transferred through address lines that are shared by the first and second column decoders, and a control signal generation circuit suitable for generating a plurality of page buffer selection signals to control the first and second column decoders to selectively perform data latch operations on the first and second page buffer blocks.