Invention Grant
- Patent Title: Damage free enhancement of dopant diffusion into a substrate
- Patent Title (中): 掺杂剂扩散到衬底中的无损增强
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Application No.: US14977849Application Date: 2015-12-22
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Publication No.: US09589802B1Publication Date: 2017-03-07
- Inventor: Christopher R. Hatem , Christopher A. Rowland
- Applicant: Varian Semiconductor Equipment Associates, Inc.
- Applicant Address: US MA Gloucester
- Assignee: Varian Semuconductor Equipment Associates, Inc.
- Current Assignee: Varian Semuconductor Equipment Associates, Inc.
- Current Assignee Address: US MA Gloucester
- Main IPC: H01L21/265
- IPC: H01L21/265 ; H01L21/324 ; H01L21/02 ; H01L29/66 ; H01L21/67 ; H01L21/8234 ; H01L21/223
Abstract:
A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.
Information query
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