Invention Grant
- Patent Title: Eliminate sawing-induced peeling through forming trenches
- Patent Title (中): 通过形成沟槽消除锯切诱发的剥离
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Application No.: US14713935Application Date: 2015-05-15
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Publication No.: US09589903B2Publication Date: 2017-03-07
- Inventor: Jie Chen , Hsien-Wei Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/544
- IPC: H01L23/544 ; H01L23/498 ; H01L23/00 ; H01L23/29 ; H01L23/31 ; H01L21/56

Abstract:
A package includes a device die, a molding material encircling the device die, wherein a top surface of the molding material is substantially level with a top surface of the device die, and a bottom dielectric layer over the device die and the molding material. A plurality of redistribution lines (RDLs) extends into the bottom dielectric layer and electrically coupling to the device die. A top polymer layer is over the bottom dielectric layer, with a trench ring penetrating through the top polymer layer. The trench ring is adjacent to edges of the package. The package further includes Under-Bump Metallurgies (UBMs) extending into the top polymer layer.
Public/Granted literature
- US20160276284A1 Eliminate Sawing-Induced Peeling Through Forming Trenches Public/Granted day:2016-09-22
Information query
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