Invention Grant
- Patent Title: 3D integration of fanout wafer level packages
- Patent Title (中): 扇出晶圆级封装的3D集成
-
Application No.: US14619002Application Date: 2015-02-10
-
Publication No.: US09589936B2Publication Date: 2017-03-07
- Inventor: Jun Zhai , Kunzhong Hu , Flynn P. Carson
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: H01L25/065
- IPC: H01L25/065 ; H01L21/48 ; H01L21/56 ; H01L23/31 ; H01L23/498 ; H01L23/00 ; H01L25/00 ; H01L23/552 ; H01L25/03 ; H01L23/525

Abstract:
Fanout wafer level packages (FOWLPs) and methods of formation are described. In an embodiment, a package includes a first routing layer, a first die on a top side of the first routing layer, and a first molding compound encapsulating the first die on the first routing layer. A first plurality of conductive pillars extends from a bottom side of the first routing layer. A second die is on a top side of a second routing layer, and the first plurality of conductive pillars is on the top side of the routing layer. A second molding compound encapsulates the first molding compound, the first routing layer, the first plurality of conductive pillars, and the second die on the second routing layer. In an embodiment, a plurality of conductive bumps (e.g. solder balls) extends from a bottom side of the second routing layer.
Public/Granted literature
- US20160148904A1 3D INTEGRATION OF FANOUT WAFER LEVEL PACKAGES Public/Granted day:2016-05-26
Information query
IPC分类: