Invention Grant
- Patent Title: Optoelectronic semiconductor chip
- Patent Title (中): 光电半导体芯片
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Application No.: US14407891Application Date: 2013-05-27
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Publication No.: US09589939B2Publication Date: 2017-03-07
- Inventor: Norwin von Malm
- Applicant: OSRAM Opto Semiconductors GmbH
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Slater Matsil, LLP
- Priority: DE102012105176 20120614
- International Application: PCT/EP2013/060882 WO 20130527
- International Announcement: WO2013/186035 WO 20131219
- Main IPC: H01L33/62
- IPC: H01L33/62 ; H01L33/48 ; H01L33/52 ; H01L31/18 ; H01L25/075 ; H05K1/02 ; H01L23/538 ; H01L33/38

Abstract:
An optoelectronic semiconductor chip includes an interconnection layer with a first electrically conductive contact layer, a second electrically conductive contact layer and an insulation layer, which is formed of an electrically insulating material. Further, the optoelectronic semiconductor chip includes two optoelectronic semiconductor bodies, each of which include an active region that is intended to generate radiation. The insulation layer is arranged on a top of the second electrically conductive contact layer facing the optoelectronic semiconductor bodies. The first electrically conductive contact layer is arranged on a top of the insulation layer remote from the second electrically conductive contact layer. The optoelectronic semiconductor bodies are interconnected electrically in parallel by the interconnection layer.
Public/Granted literature
- US20150194411A1 Optoelectronic Semiconductor Chip Public/Granted day:2015-07-09
Information query
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