Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14258720Application Date: 2014-04-22
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Publication No.: US09589980B2Publication Date: 2017-03-07
- Inventor: Chan Sun Hyun , Wan Soo Kim , Myung Kyu Ahn , Young Bin Ko
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2013-0148722 20131202
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/423 ; H01L29/66 ; H01L29/788 ; H01L29/792 ; H01L45/00 ; H01L27/24
Abstract:
A semiconductor device includes first semiconductor patterns with protrusions formed on the sidewalls thereof, and second semiconductor patterns respectively coupled to the first semiconductor patterns and increasing in width away from joining surfaces where the first semiconductor patterns and the second semiconductor patterns are coupled.
Public/Granted literature
- US20150155295A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2015-06-04
Information query
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