Invention Grant
- Patent Title: Fin-FET device and manufacturing method thereof
- Patent Title (中): Fin-FET器件及其制造方法
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Application No.: US14569336Application Date: 2014-12-12
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Publication No.: US09590032B2Publication Date: 2017-03-07
- Inventor: Chih-Han Lin , Jr-Jung Lin , Ming-Ching Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Maschoff Brennan
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L27/02 ; H01L29/06 ; H01L29/78
Abstract:
A fin-like field-effect transistor (Fin-FET) device includes a substrate, a fin structure disposed on the substrate, and an isolation structure disposed adjacent to the fin structure. The fin structure includes a recessed structure, which a bottom of the recessed structure is below a top surface of the isolation structure.
Public/Granted literature
- US20160172439A1 FIN-FET DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2016-06-16
Information query
IPC分类:
