Invention Grant
- Patent Title: Method of forming channel of gate structure
- Patent Title (中): 形成栅极结构通道的方法
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Application No.: US14150177Application Date: 2014-01-08
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Publication No.: US09590090B2Publication Date: 2017-03-07
- Inventor: Ching-Feng Fu , De-Fang Chen , Chun-Hung Lee , Huan-Just Lin , Hui-Cheng Chang
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/66 ; H01L29/786
Abstract:
A method of forming a channel of a gate structure is provided. A first epitaxial channel layer is formed within a first trench of the gate structure. A dry etching process is performed on the first epitaxial channel layer to form a second trench. A second epitaxial channel layer is formed within the second trench.
Public/Granted literature
- US20150194497A1 METHOD OF FORMING CHANNEL OF GATE STRUCTURE Public/Granted day:2015-07-09
Information query
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