Invention Grant
- Patent Title: Decoupling capacitor and method of making same
- Patent Title (中): 去耦电容及其制作方法
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Application No.: US13349723Application Date: 2012-01-13
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Publication No.: US09590119B2Publication Date: 2017-03-07
- Inventor: Chung-Hui Chen
- Applicant: Chung-Hui Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L29/94
- IPC: H01L29/94 ; H01L27/02 ; H01L23/522 ; H01L27/06
Abstract:
A device comprises a semiconductor substrate having first and second implant regions and an electrode above and between the first and second implant regions of a first dopant type. A contact structure is in direct contact with the first and second implant regions and the electrode. A third implant region has a second dopant type different from the first dopant type. A bulk contact is provided on the third implant.
Public/Granted literature
- US20130181269A1 DECOUPLING CAPACITOR AND METHOD OF MAKING SAME Public/Granted day:2013-07-18
Information query
IPC分类:
