Invention Grant
- Patent Title: Gate drive circuit with a voltage stabilizer and a method
- Patent Title (中): 具有稳压器和方法的栅极驱动电路
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Application No.: US14631362Application Date: 2015-02-25
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Publication No.: US09590619B2Publication Date: 2017-03-07
- Inventor: Jukka-Pekka Kittilä , Mika Niemi , Mikko Saarinen
- Applicant: ABB OY
- Applicant Address: FI Helsinki
- Assignee: ABB Oy
- Current Assignee: ABB Oy
- Current Assignee Address: FI Helsinki
- Agency: Taft Stattinius & Hollister LLP
- Priority: EP14156570 20140225
- Main IPC: H03B21/00
- IPC: H03B21/00 ; H03K3/00 ; H03K17/567 ; H03K17/0812 ; H03K17/14 ; H03K17/16
Abstract:
A gate drive circuit creates a bipolar voltage to a gate of an IGB power transistor, and compensates for Miller currents of the IGB power transistor. The compensating is performed by a switching element connected in series with a capacitor between the gate (X4) and a supply voltage.
Public/Granted literature
- US20150381166A1 GATE DRIVE CIRCUIT WITH A VOLTAGE STABILIZER AND A METHOD Public/Granted day:2015-12-31
Information query
