Invention Grant
- Patent Title: Analog RF memory system
- Patent Title (中): 模拟射频存储系统
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Application No.: US14294783Application Date: 2014-06-03
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Publication No.: US09590760B2Publication Date: 2017-03-07
- Inventor: Walter B. Schulte, Jr. , John P. Gianvittorio , Harry B. Marr
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: RAYTHEON COMPANY
- Current Assignee: RAYTHEON COMPANY
- Current Assignee Address: US MA Waltham
- Agency: Cantor Colburn LLP
- Main IPC: H04K3/00
- IPC: H04K3/00 ; H04L7/00 ; H04L27/34 ; H04L27/26 ; G01S7/38

Abstract:
An electronic analog memory system includes at least one analog programmable delay module configured to receive an input radio frequency pulse. The analog programmable delay module generates a time delayed output signal in response to applying at least one time delay to the input radio frequency pulse. A switching module is configured to selectively deliver the time delayed output signal to an output of the electronic analog memory system. The electronic analog memory system further includes an activity detector module configured to determine the amplitude of the input radio frequency pulse. The activity detector module also controls the switching module to deliver the time delayed output signal to the output in response to the at least one amplitude exceeding an amplitude threshold.
Public/Granted literature
- US20150349914A1 ANALOG RF MEMORY SYSTEM Public/Granted day:2015-12-03
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