Invention Grant
US09594299B2 Method of determining focus, inspection apparatus, patterning device, substrate and device manufacturing method
有权
确定焦点的方法,检查装置,图案形成装置,基板和装置的制造方法
- Patent Title: Method of determining focus, inspection apparatus, patterning device, substrate and device manufacturing method
- Patent Title (中): 确定焦点的方法,检查装置,图案形成装置,基板和装置的制造方法
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Application No.: US14410496Application Date: 2013-06-03
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Publication No.: US09594299B2Publication Date: 2017-03-14
- Inventor: Paul Christiaan Hinnen , Shu-jin Wang , Christian Marinus Leewis , Kuo-Feng Pao
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Sterne, Kessler, Goldstein & Fox P.L.L.C.
- International Application: PCT/EP2013/061370 WO 20130603
- International Announcement: WO2013/189724 WO 20131227
- Main IPC: G03B27/52
- IPC: G03B27/52 ; G03B27/68 ; G03F1/44 ; G03F7/20

Abstract:
A method of determining focus of a lithographic apparatus has the following steps. Using the lithographic process to produce first and second structures on the substrate, the first structure has features which have a profile that has an asymmetry that depends on the focus and an exposure perturbation, such as dose or aberration. The second structure has features which have a profile that is differently sensitive to focus than the first structure and which is differently sensitive to exposure perturbation than the first structure. Scatterometer signals are used to determine a focus value used to produce the first structure. This may be done using the second scatterometer signal, and/or recorded exposure perturbation settings used in the lithographic process, to select a calibration curve for use in determining the focus value using the first scatterometer signal or by using a model with parameters related to the first and second scatterometer signals.
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