Invention Grant
US09595435B2 Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
有权
用于形成包括氧化物半导体膜的多层膜的方法和用于制造半导体器件的方法
- Patent Title: Method for forming multilayer film including oxide semiconductor film and method for manufacturing semiconductor device
- Patent Title (中): 用于形成包括氧化物半导体膜的多层膜的方法和用于制造半导体器件的方法
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Application No.: US14055970Application Date: 2013-10-17
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Publication No.: US09595435B2Publication Date: 2017-03-14
- Inventor: Masashi Tsubuku , Ryosuke Watanabe , Noritaka Ishihara , Masashi Oota
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2012-232079 20121019
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/786 ; H01L27/12
Abstract:
To form an oxide semiconductor film with a low density of localized levels. To improve electric characteristics of a semiconductor device including the oxide semiconductor. After oxygen is added to an oxide film containing In or Ga in contact with an oxide semiconductor film functioning as a channel, heat treatment is performed to make oxygen in the oxide film containing In or Ga transfer to the oxide semiconductor film functioning as a channel, so that the amount of oxygen vacancies in the oxide semiconductor film is reduced. Further, an oxide film containing In or Ga is formed, oxygen is added to the oxide film, an oxide semiconductor film is formed over the oxide film, and then heat treatment is performed.
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