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    Semiconductor device
    5.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09425217B2

    公开(公告)日：2016-08-23

    申请号：US14486089

    申请日：2014-09-15

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Noritaka Ishihara ,  Masashi Oota ,  Masashi Tsubuku ,  Masami Jintyou ,  Yukinori Shima ,  Junichi Koezuka ,  Yasuharu Hosaka ,  Shunpei Yamazaki

    IPC分类号： H01L29/10 ,  H01L27/12 ,  H01L29/45 ,  H01L29/417 ,  H01L29/786

    CPC分类号： H01L29/7869 ,  H01L27/1225 ,  H01L27/124 ,  H01L29/04 ,  H01L29/24 ,  H01L29/41733 ,  H01L29/42356 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78648 ,  H01L29/78693 ,  H01L29/78696

    摘要： Defects in an oxide semiconductor film are reduced in a semiconductor device including the oxide semiconductor film. The electrical characteristics of a semiconductor device including an oxide semiconductor film are improved. The reliability of a semiconductor device including an oxide semiconductor film is improved. A semiconductor device including an oxide semiconductor layer; a metal oxide layer in contact with the oxide semiconductor layer, the metal oxide layer including an In-M oxide (M is Ti, Ga, Y, Zr, La, Ce, Nd, or Hf); and a conductive layer in contact with the metal oxide layer, the conductive layer including copper, aluminum, gold, or silver is provided. In the semiconductor device, y/(x+y) is greater than or equal to 0.75 and less than 1 where the atomic ratio of In to M included in the metal oxide layer is In:M=x:y.

    摘要翻译： 在包括氧化物半导体膜的半导体器件中，氧化物半导体膜中的缺陷减少。 提高了包括氧化物半导体膜的半导体器件的电特性。 提高了包括氧化物半导体膜的半导体器件的可靠性。 一种包括氧化物半导体层的半导体器件; 与氧化物半导体层接触的金属氧化物层，所述金属氧化物层包含In-M氧化物（M为Ti，Ga，Y，Zr，La，Ce，Nd或Hf）; 和与金属氧化物层接触的导电层，提供包括铜，铝，金或银的导电层。 在半导体器件中，y /（x + y）大于或等于0.75且小于1，其中包含在金属氧化物层中的In与M的原子比为In：M = x：y。

    Semiconductor device and method for manufacturing semiconductor device
    7.
    发明授权
    Semiconductor device and method for manufacturing semiconductor device 有权

    公开(公告)号：US11152513B2

    公开(公告)日：2021-10-19

    申请号：US16643453

    申请日：2018-08-24

    申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    发明人： Shunpei Yamazaki ,  Yoshinobu Asami ,  Takahisa Ishiyama ,  Motomu Kurata ,  Ryo Tokumaru ,  Noritaka Ishihara ,  Yusuke Nonaka

    IPC分类号： H01L29/786 ,  H01L29/22 ,  H01L29/66

    摘要： A semiconductor device with favorable reliability is provided. The semiconductor device includes a first insulator; a second insulator positioned over the first insulator; an oxide positioned over the second insulator; a first conductor and a second conductor positioned apart from each other over the oxide; a third insulator positioned over the oxide, the first conductor, and the second conductor; a third conductor positioned over the third insulator and at least partly overlapping with a region between the first conductor and the second conductor; a fourth insulator positioned to cover the oxide, the first conductor, the second conductor, the third insulator, and the third conductor; a fifth insulator positioned over the fourth insulator; and a sixth insulator positioned over the fifth insulator. An opening reaching the second insulator is formed in at least part of the fourth insulator; the fifth insulator is in contact with the second insulator through the opening; and the first insulator, the fourth insulator, and the sixth insulator have a lower oxygen permeability than the second insulator.

    Semiconductor device and method for manufactring semiconductor device
    8.
    发明授权
    Semiconductor device and method for manufactring semiconductor device 有权

    公开(公告)号：US10741679B2

    公开(公告)日：2020-08-11

    申请号：US15947902

    申请日：2018-04-09

    申请人： Semiconductor Energy Laboratory Co., Ltd.

    发明人： Shunpei Yamazaki ,  Kazutaka Kuriki ,  Yuji Egi ,  Hiromi Sawai ,  Yusuke Nonaka ,  Noritaka Ishihara ,  Daisuke Matsubayashi

    IPC分类号： H01L27/12 ,  H01L29/66 ,  H01L21/02 ,  H01L29/786 ,  H01L27/06 ,  H01L21/8258

    摘要： Provided is a semiconductor device having favorable reliability. A manufacturing method of a semiconductor device comprising the steps of: forming a first oxide semiconductor having an island shape; forming a first conductor and a second conductor over the first oxide semiconductor; forming an oxide semiconductor film over the first oxide semiconductor, the first conductor, and the second conductor; forming a first insulating film over the oxide semiconductor film; forming a conductive film over the first insulating film; removing part of the first insulating film and part of the conductive film to form a first insulator and a third conductor; forming a second insulating film covering the first insulator and the third conductor; removing part of the oxide semiconductor film and part of the second insulating film to form a second oxide semiconductor and a second insulator and to expose a side surface of the first oxide semiconductor; forming a third insulator in contact with the side surface of the first oxide semiconductor and with a side surface of the second oxide semiconductor; forming a fourth insulator in contact with the third insulator; and performing a microwave-excited plasma treatment to the third insulator and the fourth insulator.