Invention Grant
- Patent Title: Method of fabricating thin-film semiconductor substrate
- Patent Title (中): 制造薄膜半导体衬底的方法
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Application No.: US14956830Application Date: 2015-12-02
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Publication No.: US09595601B2Publication Date: 2017-03-14
- Inventor: Yuichiro Miyamae , Kenichirou Nishida , Toru Saito
- Applicant: JOLED INC.
- Applicant Address: JP Tokyo
- Assignee: JOLED, INC.
- Current Assignee: JOLED, INC.
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2014-245393 20141203
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L29/786 ; H01L21/4763 ; H01L21/02 ; H01L27/12
Abstract:
A method of fabricating a thin-film transistor substrate including a thin-film semiconductor includes: forming a metal film mainly comprising Cu above a substrate; forming a source electrode and a drain electrode by processing the metal film in a predetermined shape; irradiating the source electrode and the drain electrode with nitrogen plasma; exposing surfaces of a top and an end portion of the source electrode and the drain electrode with silane (SiH4) gas; and forming an insulating layer comprising an oxide on the source electrode and the drain electrode.
Public/Granted literature
- US20160163838A1 METHOD OF FABRICATING THIN-FILM SEMICONDUCTOR SUBSTRATE Public/Granted day:2016-06-09
Information query
IPC分类:
