公开(公告)号：US09209309B2

公开(公告)日：2015-12-08

申请号：US14003946

申请日：2012-12-28

Applicant: JOLED INC.

Inventor： Arinobu Kanegae ,  Kenichirou Nishida

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32

CPC classification number: H01L29/78678 ,  H01L27/1222 ,  H01L27/127 ,  H01L27/3262 ,  H01L29/78618 ,  H01L29/78696

Abstract: A thin-film semiconductor device) having two thin-film transistors, wherein one of the thin-film transistors includes: a first gate electrode; a first gate insulating film; a first semiconductor film; an intrinsic semiconductor layer; a first contact layer of n-type in contact with and above a portion of the intrinsic semiconductor layer; a first source electrode; and a first drain electrode, and the other of the thin-film transistors includes: a second gate electrode; a second gate insulating film; a second semiconductor film; an intrinsic semiconductor layer; a second contact layer of p-type in contact with portions of sides of the semiconductor film and the intrinsic semiconductor layer; a second source electrode; and a second drain electrode.

Abstract translation: 薄膜半导体器件），其具有两个薄膜晶体管，其中所述薄膜晶体管中的一个包括：第一栅电极; 第一栅极绝缘膜; 第一半导体膜; 本征半导体层; 与本征半导体层的一部分接触和上方的n型第一接触层; 第一源电极; 和第一漏电极，另一个薄膜晶体管包括：第二栅电极; 第二栅绝缘膜; 第二半导体膜; 本征半导体层; 与半导体膜和本征半导体层的侧面的部分接触的p型第二接触层; 第二源电极; 和第二漏电极。

公开(公告)号：US09595601B2

公开(公告)日：2017-03-14

申请号：US14956830

申请日：2015-12-02

Applicant: JOLED INC.

Inventor： Yuichiro Miyamae ,  Kenichirou Nishida ,  Toru Saito

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/786 ,  H01L21/4763 ,  H01L21/02 ,  H01L27/12

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/47635 ,  H01L21/76852 ,  H01L21/76867 ,  H01L23/53238 ,  H01L27/124 ,  H01L29/45 ,  H01L29/7869 ,  H01L29/78693

Abstract: A method of fabricating a thin-film transistor substrate including a thin-film semiconductor includes: forming a metal film mainly comprising Cu above a substrate; forming a source electrode and a drain electrode by processing the metal film in a predetermined shape; irradiating the source electrode and the drain electrode with nitrogen plasma; exposing surfaces of a top and an end portion of the source electrode and the drain electrode with silane (SiH4) gas; and forming an insulating layer comprising an oxide on the source electrode and the drain electrode.

Abstract translation: 制造包括薄膜半导体的薄膜晶体管基板的方法包括：在基板上形成主要包含Cu的金属膜; 通过以预定形状加工金属膜形成源电极和漏电极; 用氮等离子体照射源电极和漏电极; 用硅烷（SiH 4）气体暴露源极和漏电极的顶部和端部的表面; 以及在源电极和漏电极上形成包含氧化物的绝缘层。

公开(公告)号：US09236254B2

公开(公告)日：2016-01-12

申请号：US14267090

申请日：2014-05-01

Applicant: JOLED INC.

Inventor： Kenichirou Nishida ,  Tomohiko Oda ,  Yui Saitou

IPC: H01L21/36 ,  H01L21/02 ,  H01L21/268 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L21/02675 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/02683 ,  H01L21/02691 ,  H01L21/268 ,  H01L27/1285 ,  H01L29/04 ,  H01L29/66742 ,  H01L29/66765 ,  H01L29/786

Abstract: A method of thin film formation includes: preparing a substrate; forming a thin film above the substrate; and crystallizing the thin film by irradiating the thin film with a light beam, in which the crystallizing includes steps of: crystallizing the thin film in a first region into a first crystalline thin film by irradiating the first region while scanning a first light beam relative to the substrate, the first region including at least one of: edge portions of the substrate; and a region through which a cutting line passes when the substrate is cut; and subsequently crystallizing the thin film in a second region into a second crystalline thin film by irradiating at least the second region while scanning a second light beam relative to the substrate, and the thin film has a higher absorption ratio of the second light beam than that of the first crystalline thin film.

Abstract translation: 薄膜形成方法包括：制备基底; 在衬底上形成薄膜; 以及通过用光束照射所述薄膜来使所述薄膜结晶，其中所述结晶包括以下步骤：通过在扫描第一光束时照射第一区域而将第一区域中的薄膜结晶成第一晶体薄膜 所述基板，所述第一区域包括所述基板的边缘部分中的至少一个; 以及当切割基板时切割线通过的区域; 并且随后通过在扫描第二光束相对于衬底扫描至少第二区域的同时将第二区域中的薄膜结晶成第二晶体薄膜，并且该薄膜具有比第二光束更高的吸收比 的第一晶体薄膜。