Invention Grant
US09595611B2 FinFET with a single contact to multiple fins bridged together to form a source/drain region of the transistor
有权
FinFET具有与多个鳍片的单个接触，桥接在一起以形成晶体管的源极/漏极区域
- Patent Title: FinFET with a single contact to multiple fins bridged together to form a source/drain region of the transistor
- Patent Title (中): FinFET具有与多个鳍片的单个接触，桥接在一起以形成晶体管的源极/漏极区域
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Application No.: US14262712Application Date: 2014-04-26
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Publication No.: US09595611B2Publication Date: 2017-03-14
- Inventor: Seok-Hoon Kim , Bon-Young Koo , Nam-Kyu Kim , Woo-Bin Song , Byeong-Chan Lee , Su-Jin Jung
- Applicant: Seok-Hoon Kim , Bon-Young Koo , Nam-Kyu Kim , Woo-Bin Song , Byeong-Chan Lee , Su-Jin Jung
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2013-0091594 20130801
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/8234 ; H01L29/66 ; H01L27/12
Abstract:
A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.
Public/Granted literature
- US20150035023A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2015-02-05
Information query
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