Invention Grant
- Patent Title: Micro electro mechanical system, semiconductor device, and manufacturing method thereof
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Application No.: US14730362Application Date: 2015-06-04
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Publication No.: US09597933B2Publication Date: 2017-03-21
- Inventor: Mayumi Yamaguchi , Konami Izumi , Fuminori Tateishi
- Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2005-302343 20051017
- Main IPC: H01L21/00
- IPC: H01L21/00 ; B60C23/04 ; B60C23/20 ; A61B5/00 ; B81C1/00 ; G01L1/16 ; G01L17/00 ; H01L27/20 ; H01L41/311 ; H01L41/313 ; H01L21/02 ; H01L21/54 ; H01L23/00 ; H01L35/34 ; H01L41/25 ; A61B5/024
Abstract:
The present invention provides a MEMS and a sensor having the MEMS which can be formed without a process of etching a sacrifice layer. The MEMS and the sensor having the MEMS are formed by forming an interspace using a spacer layer. In the MEMS in which an interspace is formed using a spacer layer, a process for forming a sacrifice layer and an etching process of the sacrifice layer are not required. As a result, there is no restriction on the etching time, and thus the yield can be improved.
Public/Granted literature
- US20150343857A1 MICRO ELECTRO MECHANICAL SYSTEM, SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF Public/Granted day:2015-12-03
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