Invention Grant
- Patent Title: Exploiting phase-change memory write asymmetries to accelerate write
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Application No.: US14759085Application Date: 2013-12-20
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Publication No.: US09601191B2Publication Date: 2017-03-21
- Inventor: Yifeng Zhu , Jianhui Yue
- Applicant: UNIVERSITY OF MAINE SYSTEM BOARD OF TRUSTEES
- Applicant Address: US ME Bangor
- Assignee: UNIVERSITY OF MAINE SYSTEM BOARD OF TRUSTEES
- Current Assignee: UNIVERSITY OF MAINE SYSTEM BOARD OF TRUSTEES
- Current Assignee Address: US ME Bangor
- Agency: Choate, Hall & Stewart LLP
- Agent William R. Haulbrook
- International Application: PCT/US2013/076913 WO 20131220
- International Announcement: WO2014/107335 WO 20140710
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C13/00

Abstract:
To improve the write performance of PCM, the disclosed technology, in certain embodiments, provides a new write scheme, referred to herein as two-stage-write, which leverages the speed and power asymmetries of writing a zero bit and a one bit. Writing a data block to PCM is divided into two separated stages, i.e., write-0 stage and write-1 stage. Without violating power constraints, during the write-0 stage, all zero bits in this data block are written to PCM at an accelerated speed; during the write-1 stage, all one bits are written to PCM, with more bits being written concurrently. In certain embodiments, the disclosed technology provides a new coding scheme to improve the speed of the write-1 stage by further increasing the number of bits that can be written to PCM in parallel.
Public/Granted literature
- US20150340091A1 EXPLOITING PCM WRITE ASYMMETRIES TO ACCELERATE WRITE Public/Granted day:2015-11-26
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