Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14294301Application Date: 2014-06-03
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Publication No.: US09601515B2Publication Date: 2017-03-21
- Inventor: Shunpei Yamazaki , Jun Koyama , Hideomi Suzawa , Koji Ono , Tatsuya Arao
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2000-060206 20000306
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L31/036 ; H01L31/0376 ; H01L31/20 ; H01L27/12 ; H01L29/423 ; H01L29/49 ; H01L29/786 ; G02F1/1345
Abstract:
A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.
Public/Granted literature
- US20140264391A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2014-09-18
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