公开(公告)号：US09917107B2

公开(公告)日：2018-03-13

申请号：US14873863

申请日：2015-10-02

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Ono ,  Hideomi Suzawa

IPC: H01L27/14 ,  H01L29/04 ,  H01L29/15 ,  H01L31/036 ,  H01L27/12 ,  C23F4/00 ,  H01L21/3213 ,  H01L21/768 ,  H01B1/02 ,  H01B5/14 ,  H01B13/00 ,  H01L29/423 ,  H01L29/45 ,  H01L29/49

CPC classification number: H01L27/1214 ,  C23F4/00 ,  H01B1/02 ,  H01B5/14 ,  H01B13/0006 ,  H01B13/0036 ,  H01L21/32136 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/495 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

公开(公告)号：US09601515B2

公开(公告)日：2017-03-21

申请号：US14294301

申请日：2014-06-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hideomi Suzawa ,  Koji Ono ,  Tatsuya Arao

IPC: H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/786 ,  G02F1/1345

CPC classification number: H01L27/1222 ,  G02F1/13454 ,  H01L27/124 ,  H01L27/1255 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L2029/7863

Abstract: A high reliability semiconductor display device is provided. A semiconductor layer in the semiconductor display device has a channel forming region, an LDD region, a source region, and a drain region, and the LDD region overlaps a first gate electrode, sandwiching a gate insulating film.

公开(公告)号：US09246133B2

公开(公告)日：2016-01-26

申请号：US14242993

申请日：2014-04-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hisao Ikeda ,  Masataka Nakada ,  Masami Jintyou ,  Koji Ono

IPC: H01L27/32 ,  H01L51/52

CPC classification number: H01L51/5271 ,  H01L27/3246 ,  H01L51/5218 ,  H01L2251/5315

Abstract: One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided.

Abstract translation: 本发明的一个实施例涉及一种包括绝缘表面的发光器件; 绝缘表面上的下电极; 绝缘表面上的突起具有朝向下电极倾斜的侧壁; 与所述下电极的端部和所述突起的侧壁重叠的透光分隔件; 以及包括下电极，与下电极重叠的上电极和在下电极和上电极之间含有发光有机化合物的层的发光元件。 在发光装置中，突起的侧壁能够反射从发光元件射出的光。 结果，提供了降低功耗的发光装置。

公开(公告)号：US20140306201A1

公开(公告)日：2014-10-16

申请号：US14242993

申请日：2014-04-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Hisao Ikeda ,  Masataka Nakada ,  Masami Jintyou ,  Koji Ono

IPC: H01L51/52 ,  H01L27/32

CPC classification number: H01L51/5271 ,  H01L27/3246 ,  H01L51/5218 ,  H01L2251/5315

Abstract: One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided.

Abstract translation: 本发明的一个实施例涉及一种包括绝缘表面的发光器件; 绝缘表面上的下电极; 绝缘表面上的突起具有朝向下电极倾斜的侧壁; 与所述下电极的端部和所述突起的侧壁重叠的透光分隔件; 以及包括下电极，与下电极重叠的上电极和在下电极和上电极之间含有发光有机化合物的层的发光元件。 在发光装置中，突起的侧壁能够反射从发光元件射出的光。 结果，提供了降低功耗的发光装置。

公开(公告)号：US08957424B2

公开(公告)日：2015-02-17

申请号：US14223366

申请日：2014-03-24

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC: H01L27/14 ,  H01L33/08 ,  H01L27/12 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786 ,  H01L33/62

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。

公开(公告)号：US20140256116A1

公开(公告)日：2014-09-11

申请号：US14285718

申请日：2014-05-23

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Yoshihiro Kusuyama ,  Koji Ono ,  Jun Koyama

IPC: H01L21/48 ,  H01L21/02

CPC classification number: H01L21/4846 ,  G02F1/13454 ,  G02F1/13458 ,  G02F1/136286 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L21/02367 ,  H01L27/12 ,  H01L27/124 ,  H01L27/1277 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78621 ,  H01L29/78627

Abstract: There are provided a structure of a semiconductor device in which low power consumption is realized even in a case where a size of a display region is increased to be a large size screen and a manufacturing method thereof. A gate electrode in a pixel portion is formed as a three layered structure of a material film containing mainly W, a material film containing mainly Al, and a material film containing mainly Ti to reduce a wiring resistance. A wiring is etched using an IPC etching apparatus. The gate electrode has a taper shape and the width of a region which becomes the taper shape is set to be 1 μm or more.

Abstract translation: 提供了即使在将显示区域的尺寸增加到大尺寸屏幕的情况下也实现低功耗的半导体器件的结构及其制造方法。 像素部分中的栅电极形成为主要包含W的材料膜，主要包含Al的材料膜和主要包含Ti的材料膜以降低布线电阻的三层结构。 使用IPC蚀刻装置蚀刻布线。 栅电极为锥形，成为锥形的区域的宽度为1μm以上。

公开(公告)号：US08729557B2

公开(公告)日：2014-05-20

申请号：US14027871

申请日：2013-09-16

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Ono ,  Hideomi Suzawa ,  Tatsuya Arao

IPC: H01L27/14

CPC classification number: H01L27/1222 ,  G02F1/13624 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L33/08 ,  H01L33/62 ,  H01L2029/7863 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Disclosed is an electroluminescence device having a substrate, a thin film transistor over the substrate, an insulating film over the thin film transistor, an electroluminescence element over the insulating film, a passivation film over the electroluminescence element, and a counter substrate over the passivation film. The electroluminescence element is configured to emit light through the counter substrate, and a space between the substrate and the counter substrate is filled with a filler. The electroluminescence device is featured by the tapered side surface of a gate electrode of the thin film transistor.

Abstract translation: 公开了一种电致发光器件，其具有衬底，衬底上的薄膜晶体管，薄膜晶体管上的绝缘膜，绝缘膜上的电致发光元件，电致发光元件上的钝化膜以及钝化膜上的对置衬底 。 电致发光元件被配置为通过对置基板发光，并且用填充物填充基板和对向基板之间的空间。 电致发光元件的特征在于薄膜晶体管的栅电极的锥形侧面。

公开(公告)号：US20130252385A1

公开(公告)日：2013-09-26

申请号：US13890293

申请日：2013-05-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Hideomi Suzawa ,  Koji Ono ,  Yoshihiro Kusuyama

IPC: H01L29/66

CPC classification number: H01L27/1296 ,  H01L21/26513 ,  H01L21/266 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/124 ,  H01L27/127 ,  H01L27/1288 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78627 ,  H01L2029/7863

Abstract: For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed.

公开(公告)号：US20180240819A1

公开(公告)日：2018-08-23

申请号：US15916860

申请日：2018-03-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Koji Ono ,  Hideomi Suzawa

IPC: H01L27/12 ,  H01L29/49 ,  H01L29/45 ,  H01L29/423 ,  H01B5/14 ,  H01B13/00 ,  H01B1/02 ,  H01L21/768 ,  H01L21/3213 ,  C23F4/00

CPC classification number: H01L27/1214 ,  C23F4/00 ,  H01B1/02 ,  H01B5/14 ,  H01B13/0006 ,  H01B13/0036 ,  H01L21/32136 ,  H01L21/76838 ,  H01L27/12 ,  H01L27/124 ,  H01L29/42376 ,  H01L29/456 ,  H01L29/4908 ,  H01L29/495 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A metal wiring suitable for a substrate of large size is provided. The present invention is characterized in that at least one layer of conductive film is formed on an insulating surface, a resist pattern is formed on the conductive film, and the conductive film having the resist pattern is etched to form a metal wiring while controlling its taper angle α in accordance with the bias power density, the ICP power density, the temperature of lower electrode, the pressure, the total flow rate of etching gas, or the ratio of oxygen or chlorine in etching gas. The thus formed metal wiring has less fluctuation in width or length and can satisfactorily deal with an increase in size of substrate.

公开(公告)号：US09343709B2

公开(公告)日：2016-05-17

申请号：US14460514

申请日：2014-08-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kensuke Yoshizumi ,  Koji Ono

IPC: H01L51/56 ,  H01L51/00 ,  H01L51/52 ,  H01L27/32

CPC classification number: H01L51/56 ,  H01L27/3246 ,  H01L51/0014 ,  H01L51/0023 ,  H01L51/525

Abstract: To provide a highly reliable light-emitting device and especially a light-emitting device which can be formed without use of a metal mask and includes a plurality of light-emitting elements. A structural body at least an end of which has an acute-angled shape is provided so that the end can pass downward through an electrically conductive film formed over the insulating layer and can be at least in contact with an insulating layer having elasticity, thereby physically separating the electrically conductive film, and the electrically conductive films are thus electrically insulated from each other. Such a structure may be provided between adjacent light-emitting elements so that the light-emitting elements can be electrically insulated from each other in the light-emitting device.

Abstract translation: 为了提供高度可靠的发光装置，特别是可以在不使用金属掩模的情况下形成的发光装置，并且包括多个发光元件。 至少其一端具有锐角形状的结构体被设置成使得端部能够向下通过形成在绝缘层上的导电膜，并且可以至少与具有弹性的绝缘层接触，从而物理上 分离导电膜，因此导电膜彼此电绝缘。 这样的结构可以设置在相邻的发光元件之间，使得发光元件在发光器件中可以彼此电绝缘。