One or more integrated circuits including at least one integrated circuit that is fabricated in a DRAM fabrication process. Capacitors in the DRAM-fabricated integrated circuit can be used for decoupling for logic components of the integrated circuits, and may be used for fine-grain on-chip PMUs. The capacitors may be physically placed near the logic components for which the capacitors are providing decoupling capacitance, in an embodiment. The capacitors may be series connections of at least two capacitors, or at least one capacitor and a switch, to provide decoupling capacitance in the face of defects, in an embodiment. Embedded DRAM memories can be used instead of SRAM memories, with increased density and reduced leakage. More compact systems can be implemented using the integrated circuits.