Invention Grant
- Patent Title: Voltage mode sensing for low power flash memory
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Application No.: US13665409Application Date: 2012-10-31
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Publication No.: US09607708B2Publication Date: 2017-03-28
- Inventor: Kevin K. Walsh , Paul B. Patterson , Glen W. Benton , Jeffrey D. Wilkinson
- Applicant: Medtronic, Inc.
- Applicant Address: US MN Minneapolis
- Assignee: Medtronic, Inc.
- Current Assignee: Medtronic, Inc.
- Current Assignee Address: US MN Minneapolis
- Agent Scott A. Bardell
- Main IPC: G11C16/30
- IPC: G11C16/30 ; G11C7/06 ; G11C7/08 ; G11C7/22 ; G11C16/26 ; G11C16/28 ; G11C7/14 ; G11C11/00 ; G11C17/12 ; G11C29/50
Abstract:
Electrically erasable flash memory and method. The memory has a data storage element and a voltage sensing circuit. The data storage element is configured to store data bits, each of the data bits having a data state. The voltage sensing circuit is selectively coupled to individual ones of data bits and is configured to bias the data bits with at least one of a bias current and a bias resistance and to read the data state of the individual ones of the plurality of data bits.
Public/Granted literature
- US20130235663A1 VOLTAGE MODE SENSING FOR LOW POWER FLASH MEMORY Public/Granted day:2013-09-12
Information query
