Invention Grant
- Patent Title: Backside illumination (BSI) image sensor and manufacturing method thereof
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Application No.: US15273660Application Date: 2016-09-22
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Publication No.: US09608032B2Publication Date: 2017-03-28
- Inventor: Cheng-Yu Hsieh
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu; Scott Margo
- Priority: CN201510304134 20150604
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/146

Abstract:
A method for manufacturing a BSI image sensor includes following steps: A substrate is provided. The substrate includes a front side and a back side opposite to the front side. The substrate further includes a plurality of isolation structures and a plurality of sensing elements formed therein. Next, the isolation structures are exposed from the back side of the substrate. Subsequently, a thermal treatment is performed to the back side of the substrate to form a plurality of cambered surfaces on the back side of the substrate. The cambered surfaces are formed correspondingly to the sensing elements, respectively.
Public/Granted literature
- US20170012079A1 BACKSIDE ILLUMINATION (BSI) IMAGE SENSOR AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-01-12
Information query
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