- 专利标题: IGBT and IGBT manufacturing method
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申请号: US14378366申请日: 2012-02-14
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公开(公告)号: US09608071B2公开(公告)日: 2017-03-28
- 发明人: Takehiro Kato , Toru Onishi
- 申请人: Takehiro Kato , Toru Onishi
- 申请人地址: JP Toyota-Shi
- 专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人: TOYOTA JIDOSHA KABUSHIKI KAISHA
- 当前专利权人地址: JP Toyota-Shi
- 代理机构: Andrews Kurth Kenyon LLP
- 国际申请: PCT/JP2012/053371 WO 20120214
- 国际公布: WO2013/121519 WO 20130822
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L29/66 ; H01L29/739 ; H01L29/08
摘要:
An IGBT manufacturing method is provided. The IGBT has an n-type emitter region, a p-type top body region, an n-type intermediate region, a p-type bottom body region, an n-type drift region, a p-type collector region, trenches penetrating the emitter region, the top body region, the intermediate region and the bottom body region from an upper surface of a semiconductor substrate and reaching the drift region, and gate electrodes formed in the trenches. The method includes forming the trenches on the upper surface of the semiconductor substrate, forming the insulating film in the trenches, forming an electrode layer on the semiconductor substrate and in the trenches after forming the insulating film, planarizing an upper surface of the electrode layer, and implanting n-type impurities to a depth of the intermediate region from the upper surface side of the semiconductor substrate after planarizing the upper surface of the electrode layer.
公开/授权文献
- US20150008479A1 IGBT AND IGBT MANUFACTURING METHOD 公开/授权日:2015-01-08