Invention Grant
- Patent Title: Semiconductor device including field effect transistors
-
Application No.: US14989956Application Date: 2016-01-07
-
Publication No.: US09608114B2Publication Date: 2017-03-28
- Inventor: Dongwoo Kim , Seung Hun Lee , Sunjung Kim , Hyun Jung Lee , Bonyoung Koo
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse P.C.
- Priority: KR10-2015-0047581 20150403
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/10 ; H01L29/165 ; H01L29/06 ; H01L27/088

Abstract:
A semiconductor device includes a buffer layer on a substrate, the buffer layer having a lattice constant different from that of the substrate, a fin structure upwardly protruding from the buffer layer, a gate electrode crossing over the fin structure, a cladding layer at a side of the fin structure and covering a top surface and sidewalls of the fin structure, and an interfacial layer between the cladding layer and the fin structure, the interfacial layer including a same element as the buffer layer.
Public/Granted literature
- US20160293763A1 SEMICONDUCTOR DEVICE INCLUDING FIELD EFFECT TRANSISTORS Public/Granted day:2016-10-06
Information query
IPC分类: