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公开(公告)号：US09728644B2
公开(公告)日：2017-08-08
申请号：US15093892
申请日：2016-04-08
发明人： Yong-Suk Tak , Jongryeol Yoo , Hyun Jung Lee , Miseon Park , Bonyoung Koo , Sunjung Kim
IPC分类号： H01L29/00 , H01L29/78 , H01L29/08 , H01L29/66 , H01L29/165
CPC分类号： H01L29/7851 , H01L29/0847 , H01L29/165 , H01L29/66545 , H01L29/7848 , H01L29/7849
摘要： A semiconductor device includes a fin structure on a substrate and extending in a first direction, a gate electrode crossing over the fin structure, source/drain regions on the fin structure at opposite sides of the gate electrode, and a barrier layer between the fin structure and each of the source/drain regions. The fin structure includes a material having a lattice constant different from that of the substrate, the fin structure, the source/drain regions, and the barrier layer include germanium, and a germanium concentration in the barrier layer is greater than that in the fin structure and less than a maximum germanium concentration in each of the source/drain regions.
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公开(公告)号：US11881508B2
公开(公告)日：2024-01-23
申请号：US17843105
申请日：2022-06-17
发明人： Kyungin Choi , Hyunchul Song , Sunjung Kim , Taegon Kim , Seong Hoon Jeong
IPC分类号： H01L29/06 , H01L21/02 , H01L21/3105 , H01L21/3115 , H01L21/762 , H01L21/8238 , H01L27/092 , H10B10/00 , H01L21/308 , H01L29/66 , H01L29/78 , H01L21/8234 , H01L27/088 , H01L29/165 , H01L29/08
CPC分类号： H01L29/0653 , H01L21/02164 , H01L21/02271 , H01L21/3105 , H01L21/31155 , H01L21/76224 , H01L21/823828 , H01L21/823878 , H01L27/0924 , H01L29/0847 , H10B10/12 , H01L21/02208 , H01L21/308 , H01L21/823821 , H01L29/6656 , H01L29/66545
摘要： A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.
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3.发明申请SEMICONDUCTOR DEVICES HAVING IMAGE SENSOR AND MEMORY DEVICE OPERATION MODES 有权具有图像传感器和存储器件操作模式的半导体器件公开(公告)号：US20140104263A1
公开(公告)日：2014-04-17
申请号：US14050993
申请日：2013-10-10
发明人： Sunjung Kim , Wang Hyun Kim , Kwanghyun Lee , Seokyong Hong , Seunghoon Lee , JuHwan Jung
IPC分类号： G09G3/36
CPC分类号： G09G3/3696 , G09G3/02 , G09G3/2092 , G09G5/39 , G09G2360/142 , G11C11/403 , G11C11/4076 , G11C2211/4016
摘要： A semiconductor device may include a plurality of banks; and a control unit configured to receive a command from an external device and independently control the plurality of banks according to the received command. Each bank comprises a pixel array including a plurality of pixels; a row decoder configured to activate word lines connected to the plurality of pixels under control of the control unit; a column decoder configured to activate bit lines connected to the plurality of pixels under control of the control unit; a sense amplifier and write driver configured to control and detect respective voltages of the activated bit lines to provide respective amplified voltages; and an input/output buffer configured to output data states of the pixels based on the respective amplified voltages. Related methods of operation are also discussed.
摘要翻译： 半导体器件可以包括多个堤; 以及控制单元，被配置为从外部设备接收命令，并根据所接收的命令独立地控制所述多个存储体。 每个存储体包括包括多个像素的像素阵列; 行解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的字线; 列解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的位线; 读出放大器和写入驱动器，被配置为控制和检测激活的位线的相应电压以提供相应的放大电压; 以及输入/输出缓冲器，被配置为基于相应的放大电压输出像素的数据状态。 还讨论了相关的操作方法。
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4.发明授权公开(公告)号：US11528439B2
公开(公告)日：2022-12-13
申请号：US17032373
申请日：2020-09-25
发明人： Sunjung Kim , Sejun Kim , Hoyong Na , Seongyeop Park , Jihun Shin , Minwoo Lee , Youngtae Jang , Youngkyun Jeong , Jinkyeong Heo
IPC分类号： H04N5/3745 , H04N5/378 , H04N5/369
摘要： An image sensor includes a dual conversion gain pixel to output a high conversion gain signal according to a high conversion gain and output a low conversion gain signal according to a low conversion gain, by adjusting a conversion gain; a scaler to scale a voltage level of the high conversion gain signal; a ramp generator to generate a first ramp signal and a second ramp signal, slopes of the first and second ramp signals being different from each other; a comparator to compare the scaled high conversion gain signal and the first ramp signal to output a first comparison result, and compare the low conversion gain signal and the second ramp signal to output a second comparison result; and a counter to output a first counting result value based on the first comparison result and output a second counting result value based on the second comparison result.
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公开(公告)号：US11271110B2
公开(公告)日：2022-03-08
申请号：US16693439
申请日：2019-11-25
发明人： Tae-Jong Lee , Sanghyuk Hong , TaeYong Kwon , Sunjung Kim , Cheol Kim
IPC分类号： H01L29/78 , H01L29/08 , H01L29/161 , H01L29/16 , H01L29/165 , H01L29/66 , H01L21/8238
摘要： Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.
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公开(公告)号：US10861695B2
公开(公告)日：2020-12-08
申请号：US16217339
申请日：2018-12-12
发明人： Sunyoung Lee , Minjae Kang , Se-Yeon Kim , Teawon Kim , Yong-Suk Tak , Sunjung Kim
IPC分类号： H01L21/00 , H01L21/02 , C23C16/36 , C23C16/455 , H01L21/28 , H01L29/165 , H01L29/49 , H01L29/66
摘要： A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.
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公开(公告)号：US10208401B2
公开(公告)日：2019-02-19
申请号：US15664294
申请日：2017-07-31
发明人： Keum Seok Park , Sunjung Kim , Yihwan Kim
IPC分类号： C30B25/04 , C30B33/12 , C30B25/12 , C30B25/14 , C30B31/16 , C30B31/14 , H01L21/02 , H01L29/66
摘要： Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.
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8.发明授权Semiconductor devices having image sensor and memory device operation modes 有权具有图像传感器和存储器件操作模式的半导体器件公开(公告)号：US09082368B2
公开(公告)日：2015-07-14
申请号：US14050993
申请日：2013-10-10
发明人： Sunjung Kim , Wang Hyun Kim , Kwanghyun Lee , Seokyong Hong , Seunghoon Lee , JuHwan Jung
IPC分类号： G09G3/36 , G11C11/403 , G11C11/4076 , G09G3/02 , G09G3/20 , G09G5/39 , H04N5/3745 , H04N5/355
CPC分类号： G09G3/3696 , G09G3/02 , G09G3/2092 , G09G5/39 , G09G2360/142 , G11C11/403 , G11C11/4076 , G11C2211/4016
摘要： A semiconductor device may include a plurality of banks; and a control unit configured to receive a command from an external device and independently control the plurality of banks according to the received command. Each bank comprises a pixel array including a plurality of pixels; a row decoder configured to activate word lines connected to the plurality of pixels under control of the control unit; a column decoder configured to activate bit lines connected to the plurality of pixels under control of the control unit; a sense amplifier and write driver configured to control and detect respective voltages of the activated bit lines to provide respective amplified voltages; and an input/output buffer configured to output data states of the pixels based on the respective amplified voltages. Related methods of operation are also discussed.
摘要翻译： 半导体器件可以包括多个堤; 以及控制单元，被配置为从外部设备接收命令，并根据所接收的命令独立地控制所述多个存储体。 每个存储体包括包括多个像素的像素阵列; 行解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的字线; 列解码器，被配置为在所述控制单元的控制下激活连接到所述多个像素的位线; 读出放大器和写入驱动器，被配置为控制和检测激活的位线的相应电压以提供相应的放大电压; 以及输入/输出缓冲器，被配置为基于相应的放大电压输出像素的数据状态。 还讨论了相关的操作方法。
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公开(公告)号：US11380760B2
公开(公告)日：2022-07-05
申请号：US17028042
申请日：2020-09-22
发明人： Kyungin Choi , Hyunchul Song , Sunjung Kim , Taegon Kim , Seong Hoon Jeong
IPC分类号： H01L29/06 , H01L21/02 , H01L21/3105 , H01L21/3115 , H01L21/762 , H01L21/8238 , H01L27/092 , H01L27/11 , H01L29/08 , H01L21/308 , H01L29/66 , H01L27/088 , H01L21/8234 , H01L29/165 , H01L29/78 , H01L29/423
摘要： A semiconductor device includes a substrate including a first active pattern and a second active pattern, a device isolation layer filling a first trench between the first and second active patterns, the device isolation layer including a silicon oxide layer doped with helium, a helium concentration of the device isolation layer being higher than a helium concentration of the first and second active patterns, and a gate electrode crossing the first and second active patterns.
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公开(公告)号：US20190333754A1
公开(公告)日：2019-10-31
申请号：US16217339
申请日：2018-12-12
发明人： Sunyoung Lee , Minjae Kang , Se-Yeon Kim , Teawon Kim , Yong-Suk Tak , Sunjung Kim
IPC分类号： H01L21/02 , H01L21/28 , H01L29/49 , H01L29/66 , H01L29/165 , C23C16/36 , C23C16/455
摘要： A method of forming a low-k layer includes forming a layer by providing a silicon source, a carbon source, an oxygen source, and a nitrogen source onto a substrate. The forming of the layer includes a plurality of main cycles, and each of the main cycles includes providing the silicon source, providing the carbon source, providing the oxygen source, and providing the nitrogen source, each of which is performed at least one time. Each of the main cycles includes sub-cycles in which the providing of the carbon source and the providing of the oxygen source are alternately performed.
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