Invention Grant
- Patent Title: Micro-electro mechanical system (MEMS) device having a blocking layer formed between closed chamber and a dielectric layer of a CMOS substrate
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Application No.: US14049988Application Date: 2013-10-09
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Publication No.: US09617150B2Publication Date: 2017-04-11
- Inventor: Chia-Hua Chu , Chun-Wen Cheng
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: B81C3/00
- IPC: B81C3/00 ; B81C1/00 ; B81B7/00

Abstract:
Embodiments of mechanisms for forming a micro-electro mechanical system (MEMS) device are provided. The MEMS device includes a CMOS substrate and a MEMS substrate bonded with the CMOS substrate. The CMOS substrate includes a semiconductor substrate, a first dielectric layer formed over the semiconductor substrate, and a plurality of conductive pads formed in the first dielectric layer. The MEMS substrate includes a semiconductor layer having a movable element and a second dielectric layer formed between the semiconductor layer and the CMOS substrate. The MEMS substrate also includes a closed chamber surrounding the movable element. The MEMS substrate further includes a blocking layer formed between the closed chamber and the first dielectric layer of the CMOS substrate. The blocking layer is configured to block gas, coming from the first dielectric layer, from entering the closed chamber.
Public/Granted literature
- US20150097215A1 MECHANISMS FOR FORMING MICRO-ELECTRO MECHANICAL SYSTEM DEVICE Public/Granted day:2015-04-09
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