- 专利标题: Multi-layer mask including non-photodefinable laser energy absorbing layer for substrate dicing by laser and plasma etch
-
申请号: US14775651申请日: 2014-03-11
-
公开(公告)号: US09620379B2公开(公告)日: 2017-04-11
- 发明人: Wei-Sheng Lei , Mohammad Kamruzzaman Chowdhury , Todd Egan , Brad Eaton , Madhava Rao Yalamanchili , Ajay Kumar
- 申请人: APPLIED MATERIALS, INC.
- 申请人地址: US CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: US CA Santa Clara
- 代理机构: Blakely Sokoloff Taylor Zafman LLP
- 国际申请: PCT/US2014/023767 WO 20140311
- 国际公布: WO2014/159464 WO 20141002
- 主分类号: H01L21/67
- IPC分类号: H01L21/67 ; H01L21/78 ; H01L21/308 ; H01L21/3065 ; B23K26/364 ; B23K26/40 ; B23K26/402 ; H01L21/673 ; H01L21/687 ; H01L21/82 ; B23K103/16 ; B23K103/00
摘要:
Methods of dicing substrates having a plurality of ICs. A method includes forming a multi-layered mask comprising a laser energy absorbing, non-photodefinable topcoat disposed over a water-soluble base layer disposed over the semiconductor substrate. Because the laser light absorbing material layer is non-photodefinable, material costs associated with conventional photo resist formulations may be avoided. The mask is direct-write patterned with a laser scribing process to provide a patterned mask with gaps. The patterning exposes regions of the substrate between the ICs. Absorption of the mask layer within the laser emission band (e.g., UV band and/or green band) promotes good scribe line quality. The substrate may then be plasma etched through the gaps in the patterned mask to singulate the IC with the mask protecting the ICs during the plasma etch. The soluble base layer of the mask may then be dissolved subsequent to singulation, facilitating removal of the layer.
公开/授权文献
信息查询
IPC分类: