Invention Grant
- Patent Title: Hybrid substrates, semiconductor packages including the same and methods for fabricating semiconductor packages
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Application No.: US15260723Application Date: 2016-09-09
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Publication No.: US09620494B2Publication Date: 2017-04-11
- Inventor: Daewoo Son , Chulwoo Kim
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2010-0128414 20101215
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L25/00 ; H01L21/56 ; H01L25/065 ; H01L21/768 ; H01L21/48 ; H01L23/31 ; H01L23/498 ; H01L23/00

Abstract:
Provided are a hybrid substrate, a semiconductor package including the same, and a method for fabricating the semiconductor package. The hybrid substrate may include an insulation layer, and an organic layer. The insulation layer may include a top, a bottom opposite to the top, and a conductive pattern having different pitches. The organic layer may be connected to the bottom of the insulation layer, and may include a circuit pattern connected to the conductive pattern. The conductive pattern may include a first metal pattern, and a second conductive pattern. The first metal pattern may have a first pitch, and may be disposed in the top of the insulation layer. The second conductive pattern may have a second pitch greater than the first pitch, and may be extended from the first metal pattern to be connected to the circuit pattern through the insulation layer.
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