Invention Grant
- Patent Title: Magnetic etch stop layer for spin-transfer torque magnetoresistive random access memory magnetic tunnel junction device
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Application No.: US14558103Application Date: 2014-12-02
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Publication No.: US09620706B2Publication Date: 2017-04-11
- Inventor: Kangho Lee , Chando Park , Jimmy Kan , Matthias Georg Gottwald , Xiaochun Zhu , Seung Hyuk Kang
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Toler Law Group, PC
- Main IPC: H01L29/82
- IPC: H01L29/82 ; H01L21/02 ; H01L21/00 ; H01L43/08 ; H01L43/12
Abstract:
An apparatus includes a capping layer disposed on top of a free layer. The apparatus also includes a magnetic etch stop layer disposed on top of the capping layer. The capping layer and the magnetic etch stop layer are included in a spin-transfer torque magnetoresistive random access memory (STT-MRAM) magnetic tunnel junction (MTJ) device.
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