Invention Grant
- Patent Title: Semiconductor package and fabrication method thereof
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Application No.: US14919867Application Date: 2015-10-22
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Publication No.: US09627307B2Publication Date: 2017-04-18
- Inventor: Ching-Wen Chiang , Cheng-Hao Ciou , Cheng-Chieh Wu , Kuang-Hsin Chen , Hsien-Wen Chen
- Applicant: Siliconware Precision Industries Co., Ltd.
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW103139187A 20141112
- Main IPC: H01L23/31
- IPC: H01L23/31 ; H01L23/498 ; H01L21/48 ; H01L21/56 ; H01L23/538 ; H01L23/00

Abstract:
A semiconductor package is provided, including: an insulating base body having a first surface with an opening and a second surface opposite to the first surface; an insulating extending body extending outward from an edge of the first surface of the insulating base body, wherein the insulating extending body is less in thickness than the insulating base body; an electronic element having opposite active and inactive surfaces and disposed in the opening with its inactive surface facing the insulating base body; a dielectric layer formed in the opening of the insulating base body and on the first surface of the insulating base body, the insulating extending body and the active surface of the electronic element; and a circuit layer formed on the dielectric layer and electrically connected to the electronic element. The configuration of the insulating layer of the invention facilitates to enhance the overall structural rigidity of the package.
Public/Granted literature
- US20160133556A1 SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF Public/Granted day:2016-05-12
Information query
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