- 专利标题: High voltage metal oxide semiconductor device and method for making same
-
申请号: US12715501申请日: 2010-03-02
-
公开(公告)号: US09627524B2公开(公告)日: 2017-04-18
- 发明人: Tsung-Yi Huang , Huan-Ping Chu , Ching-Yao Yang , Hung-Der Su
- 申请人: Tsung-Yi Huang , Huan-Ping Chu , Ching-Yao Yang , Hung-Der Su
- 申请人地址: TW Chupei, Hsinchu
- 专利权人: RICHTEK TECHNOLOGY CORPORATION, R.O.C.
- 当前专利权人: RICHTEK TECHNOLOGY CORPORATION, R.O.C.
- 当前专利权人地址: TW Chupei, Hsinchu
- 代理机构: Tung & Associates
- 主分类号: H01L29/66
- IPC分类号: H01L29/66 ; H01L29/78
摘要:
The present invention discloses a high voltage metal oxide semiconductor (HVMOS) device and a method for making same. The high voltage metal oxide semiconductor device comprises: a substrate; a gate structure on the substrate; a well in the substrate, the well defining a device region from top view; a first drift region in the well; a source in the well; a drain in the first drift region, the drain being separated from the gate structure by a part of the first drift region; and a P-type dopant region not covering all the device region, wherein the P-type dopant region is formed by implanting a P-type dopant for enhancing the breakdown voltage of the HVMOS device (for N-type HVMOS device) or reducing the ON resistance of the HVMOS device (for P-type HVMOS device).