- 专利标题： Semiconductor device and method for making the same
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申请号： US13613848申请日： 2012-09-13
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公开(公告)号： US09633998B2公开(公告)日： 2017-04-25
- 发明人: Stanislav Ivanovich Soloviev , Ahmed Elasser , Alexander Viktorovich Bolotnikov , Alexey Vert , Peter Almern Losee
- 申请人： Stanislav Ivanovich Soloviev , Ahmed Elasser , Alexander Viktorovich Bolotnikov , Alexey Vert , Peter Almern Losee
- 申请人地址： US NY Niskayuna
- 专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人： GENERAL ELECTRIC COMPANY
- 当前专利权人地址： US NY Niskayuna
- 代理商 John P. Darling
- 主分类号： H01L29/15
- IPC分类号： H01L29/15 ; H01L27/06 ; H01L27/08
摘要：
A semiconductor device is provided. The semiconductor device includes an avalanche photodiode unit and a thyristor unit. The avalanche photodiode unit is configured to receive incident light to generate a trigger current and comprises a wide band-gap semiconductor. The thyristor unit is configured to be activated by the trigger current to an electrically conductive state. A semiconductor device and a method for making a semiconductor device are also presented.
公开/授权文献
- US20140070231A1 SEMICONDUCTOR DEVICE AND METHOD FOR MAKING THE SAME 公开/授权日：2014-03-13
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