Invention Grant
- Patent Title: Field effect transistor device spacers
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Application No.: US15168725Application Date: 2016-05-31
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Publication No.: US09634010B2Publication Date: 2017-04-25
- Inventor: Rama Kambhampati , Junli Wang , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Applicant Address: US NY Armonk KY Grand Cayman
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- Current Assignee Address: US NY Armonk KY Grand Cayman
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L27/092 ; H01L29/10 ; H01L29/16 ; H01L29/161 ; H01L21/8238 ; H01L29/66
Abstract:
A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.
Public/Granted literature
- US20170040325A1 FIELD EFFECT TRANSISTOR DEVICE SPACERS Public/Granted day:2017-02-09
Information query
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