Invention Grant
- Patent Title: Bulk acoustic wave resonator
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Application No.: US13691114Application Date: 2012-11-30
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Publication No.: US09634643B2Publication Date: 2017-04-25
- Inventor: Jea Shik Shin , Duck Hwan Kim , Chul Soo Kim , Sang Uk Son , In Sang Song , Moon Chul Lee
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2011-0127686 20111201
- Main IPC: H01L41/08
- IPC: H01L41/08 ; H03H9/17 ; H03H3/02 ; H03H9/02
Abstract:
Disclosed is a bulk acoustic wave resonator (BAWR). The BAWR includes a bulk acoustic wave resonance unit with a first electrode, a second electrode, and a piezoelectric layer. The piezoelectric layer is disposed between the first electrode and the second electrode. An air edge is formed at a distance from a center of the bulk acoustic wave resonance unit.
Public/Granted literature
- US20130140959A1 BULK ACOUSTIC WAVE RESONATOR Public/Granted day:2013-06-06
Information query
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